Effect of plasma gases on insulating properties of low-temperature- deposited SiOCH films prepared by remote plasma-enhanced chemical vapor deposition

被引：0
|
作者：
Yamaoka, Keisuke [1 ]
Okada, Naomichi [1 ]
Yoshizako, Yuji [1 ]
Terai, Yoshikazu [1 ]
Fujiwara, Yasufumi [1 ]
机构：
[1] Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, Suita, Osaka 565-0871, Japan
来源：
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2007年 / 46卷 / 4 B期
关键词：
Carbon-doped silicon oxide (SiOCH) films were deposited by plasma-enhanced chemical vapor deposition (PECVD) using tetraethoxysilane (TEOS) at low temperatures (27-53 °C). The structural and insulating properties of the films deposited with Ar or N2 plasma were investigated. In the deposition with low plasma density and low substrate temperature; both plasmas produced films with high hydrocarbon (CHn) content. The films prepared using Ar plasma showed a low leakage current of 7 × 10 -10A/cm2 at 1 MV/cm due to the incorporation of CH n groups; while the films with high CHn content prepared using N2 plasma showed poor insulating properties. The deposition using N2 plasma formed films with a defective structure; resulting in a higher etch rate than that of the films deposited with Ar plasma. The deposition with the low-density plasma of inert Ar gas is suitable for the low-temperature deposition of SiOCH films with high resistivity. © 2007 The Japan Society of Applied Physics;
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页码：1997 / 2000
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