Electrical instabilities in amorphous InGaZnO thin film transistors with Si3N4 and Si3N4/Al2O 3 gate dielectrics

被引：0
|
作者：
Kim, Yu-Mi [1 ]
Jeong, Kwang-Seok [1 ]
Yun, Ho-Jin [1 ]
Yang, Seung-Dong [1 ]
Lee, Sang-Youl [1 ]
Lee, Hi-Deok [1 ]
Lee, Ga-Won [1 ]
机构：
[1] Department of Electronics Engineering, Chungnam National University, Daejeon 305-764, Korea, Republic of
来源：
Japanese Journal of Applied Physics | 2012年 / 51卷 / 9 PART3期
关键词：
Compendex;
D O I：
09MF10
中图分类号：
学科分类号：
摘要：
Silicon compounds
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