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- [8] Gate leakage mechanisms in normally off p-GaN/AlGaN/GaN high electron mobility transistorsAPPLIED PHYSICS LETTERS, 2018, 113 (15)Xu, NingHao, RonghuiChen, FuZhang, XiaodongZhang, HuiZhang, PeipeiDing, XiaoyuSong, LiangYu, GuohaoCheng, KaiCai, YongZhang, Baoshun
- [9] p-GaN Selective Nitridation to Obtain a Normally Off p-GaN Gate AlGaN/GaN High-Electron-Mobility TransistorsPHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2024, 18 (04):Lu, ShaoqianYu, GuohaoSun, YingfeiYuan, XuDu, ZhongkaiZhang, BingliangWang, LuLi, YuWu, DongdongHuang, ZengliZeng, ZhongmingQin, XuleiZhang, Baoshun
- [10] Design of normally-off p-GaN/AlGaN/GaN heterojunction field-effect transistors with re-grown AlGaN barrierJOURNAL OF CRYSTAL GROWTH, 2023, 607Han, XiaobiaoLin, WangWang, QiliangCheng, ShaohengLi, LiuanHe, Liang