High-temperature operation of normally off-mode AlGaN/GaN heterostructure field-effect transistors with p-GaN gate

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作者：

Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan ^{[1
]}

不详 ^{[2
]}

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来源：

Jpn. J. Appl. Phys. | / 1 PART 2卷

关键词：

Compendex;

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摘要：

Gallium nitride

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