High-temperature operation of normally off-mode AlGaN/GaN heterostructure field-effect transistors with p-GaN gate

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Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan [1 ]
不详 [2 ]
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Jpn. J. Appl. Phys. | / 1 PART 2卷
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摘要：
Gallium nitride
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