High-Temperature Characteristics in Normally Off AlGaN/GaN Heterostructure Field-Effect Transistors with Recessed-Gate Enhanced-Barrier Structures

被引：12

作者：

Maeda, Narihiko ^{[1
]}

Hiroki, Masanobu ^{[1
]}

Sasaki, Satoshi ^{[2
]}

Harada, Yuichi ^{[2
]}

机构：

[1] NTT Corp, NTT Photon Labs, Atsugi, Kanagawa 2430198, Japan

[2] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

来源：

APPLIED PHYSICS EXPRESS | 2012年 / 5卷 / 08期

关键词：

OFF OPERATION; HEMTS; HFET;

D O I：

10.1143/APEX.5.084201

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-temperature characteristics in normally off AlGaN/GaN heterostructure field-effect transistors (HFETs) with recessed-gate enhanced-barrier structures were examined up to 300 degrees C, where a high threshold voltage (Vth) of +3.0 V and a high drain current density (I-d) of 610 mA/mm were obtained at room temperature (RT). Interestingly, I-d did not degrade significantly up to 300 degrees C with a small positive shift in Vth from +3.0 to +3.5 V. A model has been proposed that channel electrons should experience a potential step when they pass the nonrecessed/recessed boundary region in recessed-gate structures, which should be related to the observed high-temperature characteristics. (C) 2012 The Japan Society of Applied Physics

引用

页数：3

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