Model and analysis of 4H-SiC Schottky diode as γ-ray detector

被引：0
|
作者：
Key Laboratory of Wide Band Gap Semiconductor Materials, Microelectronics Institute, Xidian University, Xi'an 710071, China [1 ]
不详 [2 ]
机构：
来源：
Qiangjiguang Yu Lizishu | 2008年 / 5卷 / 854-858期
关键词：
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [31] 4H-SiC Schottky diode radiation hardness assessment by IBIC microscopy
    Vittone, Ettore
    Olivero, Paolo
    Jaksic, Milko
    Pastuovic, Zeljko
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2023, 537 : 14 - 22
  • [32] Barrier inhomogeneities of a medium size Mo/4H-SiC Schottky diode
    Zaman, Muhammad Yousuf
    Perrone, Denis
    Ferrero, Sergio
    Scaltrito, Luciano
    Naretto, Marco
    HETEROSIC & WASMPE 2011, 2012, 711 : 188 - +
  • [33] Optimized Annealing Temperature of Ti/4H-SiC Schottky Barrier Diode
    Yun, Seung Bok
    Kim, Jeong Han
    Kang, Ye Hwan
    Lee, Jung Hoon
    Kim, Ki-Hyun
    Kim, Sung-Su
    Jung, Eun Sik
    Kang, In-Ho
    Shin, Hoon Kyu
    Yang, Chang Heon
    JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, 2017, 17 (05) : 3406 - 3408
  • [34] Influence of pinning trap in Ti/4H-SiC Schottky barrier diode
    Ohtsuka, K
    Matsuno, Y
    Hase, Y
    Sugimoto, H
    Fujihira, K
    Tarui, Y
    Imaizumi, M
    Takami, T
    Ozeki, T
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2003, 6 (5-6) : 359 - 362
  • [35] Electrical characteristics of Ti/4H-SiC silicidation Schottky barrier diode
    Kinoshita, Akimasa
    Nishi, Takashi
    Ohyanagi, Takasumi
    Yatsuo, Tsutomu
    Fukuda, Kenji
    Okumura, Hajime
    Arai, Kazuo
    SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 643 - +
  • [36] Study on 4H-SiC Trench Schottky-Type Neutron Detector
    Jiang, Wan-Chen
    Wang, Ying
    Hong, Bing
    Liu, Yun-Tao
    Zhang, Rui
    IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 2024, 73
  • [37] Effect of Proton Irradiation Induced Defects on 4H-SiC Schottky Diode X-ray Detectors
    Stevens, Rupert C.
    Vassilevski, Konstantin
    Lees, John E.
    Wright, Nicholas G.
    Horsfall, Alton B.
    SILICON CARBIDE AND RELATED MATERIALS 2010, 2011, 679-680 : 547 - +
  • [38] Edge termination study and fabrication of a 4H-SiC junction barrier Schottky diode
    陈丰平
    张玉明
    张义门
    汤晓燕
    王悦湖
    陈文豪
    Chinese Physics B, 2011, 20 (11) : 446 - 450
  • [39] A study on electrical properties of Au/4H-SiC Schottky diode under illumination
    D. E. Yıldız
    S. Karadeniz
    H. H. Gullu
    Journal of Materials Science: Materials in Electronics, 2021, 32 : 20130 - 20138
  • [40] Influence of deep defects on electrical properties of Ni/4H-SiC Schottky diode
    Li, Jin-Lan
    Li, Yun
    Wang, Ling
    Xu, Yue
    Yan, Feng
    Han, Ping
    Ji, Xiao-Li
    CHINESE PHYSICS B, 2019, 28 (02)
12345