Influence of pinning trap in Ti/4H-SiC Schottky barrier diode

被引：4
|
作者：
Ohtsuka, K [1 ]
Matsuno, Y [1 ]
Hase, Y [1 ]
Sugimoto, H [1 ]
Fujihira, K [1 ]
Tarui, Y [1 ]
Imaizumi, M [1 ]
Takami, T [1 ]
Ozeki, T [1 ]
机构：
[1] Mitsubishi Electr Corp, Adv Technol R&D Ctr, Amagasaki, Hyogo 6618661, Japan
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2003年 / 6卷 / 5-6期
关键词：
SiC; Schottky barrier; interface pinning; breakdown; power device;
D O I：
10.1016/j.mssp.2003.08.016
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Ti/4H-SiC Schottky barrier diode without any intentional edge termination is fabricated. The obtained properties, low on-resistance of 3 mOmega cm(2) and low leakage current of 10(-4) A/cm(2) at 1000 V, are evaluated by device simulation considering pinning at metal/semiconductor interface. The breakdown voltage is explained by minimization of electric field enhancement at the Schottky electrode edge due to pinning. The leakage current corresponds to Schottky barrier tunneling current depending on drift layer doping and Schottky barrier height. (C) 2003 Elsevier Ltd. All rights reserved.
引用
收藏
页码：359 / 362
页数：4
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