Modeling of processes of gettering the generation-recombination centers in silicon at diffusion of phosphorus and boron

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作者：

National University of Science and Technology MISiS, 4 Leninsky av., Moscow ^{[1
]}

119049, Russia

不详 ^{[2
]}

111538, Russia

不详 ^{[3
]}

119454, Russia

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来源：

Appl. Phys. | / 5卷 / 15-20期

关键词：

Phosphorus - Borosilicate glass - Silicon;

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暂无

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摘要：

The model is applied to a several case, where phosphorus or boron layers gettering is performed Agreement with experimental results is established if the P+-Fe2- ion paires are formed during phosphorus gettering. A borosilicate glass layer is the gettering site during boron gettering. The model predicts the effectivity for gettering according to the process parameters.

引用

共 50 条

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