Modeling of processes of gettering the generation-recombination centers in silicon at diffusion of phosphorus and boron

被引：0
|
作者：
National University of Science and Technology MISiS, 4 Leninsky av., Moscow [1 ]
119049, Russia
不详 [2 ]
111538, Russia
不详 [3 ]
119454, Russia
机构：
来源：
Appl. Phys. | / 5卷 / 15-20期
关键词：
Phosphorus - Borosilicate glass - Silicon;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
The model is applied to a several case, where phosphorus or boron layers gettering is performed Agreement with experimental results is established if the P+-Fe2- ion paires are formed during phosphorus gettering. A borosilicate glass layer is the gettering site during boron gettering. The model predicts the effectivity for gettering according to the process parameters.
引用
收藏
相关论文
共 50 条
  • [41] GETTERING EFFECT IN MULTICRYSTALLINE SILICON-WAFERS BY PHOSPHORUS DIFFUSION
    PERICHAUD, I
    MARTINUZZI, S
    JOURNAL DE PHYSIQUE III, 1992, 2 (03): : 313 - 324
  • [42] Direct comparison of boron, phosphorus, and aluminum gettering of iron in crystalline silicon
    Phang, S. P.
    Macdonald, D.
    JOURNAL OF APPLIED PHYSICS, 2011, 109 (07)
  • [43] BORON, PHOSPHORUS AND ALUMINUM GETTERING OF IRON IN CRYSTALLINE SILICON: EXPERIMENTS AND MODELLING
    Phang, S. P.
    Macdonald, D.
    35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, 2010, : 352 - 356
  • [44] Hypocoercivity and Reaction-Diffusion Limit for a Nonlinear Generation-Recombination Model
    Favre, Gianluca
    Pirner, Marlies
    Schmeiser, Christian
    ARCHIVE FOR RATIONAL MECHANICS AND ANALYSIS, 2023, 247 (04)
  • [45] Behavior of elemental tellurium as surface generation-recombination centers in CdTe/HgCdTe interface
    Lee, Min Yung
    Lee, Yong Soo
    Lee, Hee Chul
    APPLIED PHYSICS LETTERS, 2006, 88 (20)
  • [46] Generation-recombination and diffusion currents in HgMnTe n+-p junctions
    Kosyachenko, LA
    Markov, AV
    Ostapov, SÉ
    Rarenko, IM
    SEMICONDUCTORS, 2001, 35 (11) : 1270 - 1278
  • [47] Hypocoercivity and Reaction-Diffusion Limit for a Nonlinear Generation-Recombination Model
    Gianluca Favre
    Marlies Pirner
    Christian Schmeiser
    Archive for Rational Mechanics and Analysis, 2023, 247
  • [48] Effects of oxygen-related traps in silicon on the generation-recombination noise
    Tejada, JAJ
    Villanueva, JAL
    Godoy, A
    Carceller, JE
    Gómez-Campo, FM
    Rodríguez-Bolivar, S
    Noise and Fluctuations, 2005, 780 : 717 - 720
  • [49] Generation-recombination and thermal noise coupling in the drift-diffusion model
    Zocchi, Fabio E.
    JOURNAL OF APPLIED PHYSICS, 2007, 102 (10)
  • [50] The effect of generation-recombination mechanisms on the transient behavior of polycrystalline silicon transistors
    Papaioannou, GJ
    Voutsas, A
    Exarchos, M
    Kouvatsos, D
    THIN SOLID FILMS, 2005, 487 (1-2) : 247 - 251
12345