GENERATION-RECOMBINATION NOISE IN P-TYPE SILICON

被引：33
|
作者：
BOSMAN, G
ZIJLSTRA, RJJ
机构：
来源：
SOLID-STATE ELECTRONICS | 1982年 / 25卷 / 04期
关键词：
D O I：
10.1016/0038-1101(82)90135-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：273 / 280
页数：8
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