LIFETIME OF NONEQUILIBRIUM CARRIERS AND GENERATION-RECOMBINATION NOISE IN P-TYPE INSB

被引：0

作者：

GALAVANOV, VV ^{[1
]}

ODING, VG ^{[1
]}

机构：

[1] AF IOFFE ENGN PHYS INST,LENINGRAD,USSR

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1975年 / 9卷 / 10期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1317 / 1319

页数：3

共 50 条

[1] GENERATION-RECOMBINATION NOISE IN P-TYPE INSB
KAZANTSEV, GA
ROZHDEST.VV
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1967, 1 (05): : 550 - +
[2] GENERATION-RECOMBINATION NOISE IN P-TYPE INSB
KLAASSEN, FM
DEHOOG, FJ
BLOK, J
[J]. PHYSICA, 1961, 27 (02): : 185 - &
[3] GENERATION-RECOMBINATION NOISE IN P-TYPE INSB AT 78 DEGREES K
GALAVANOV, VV
IVCHENKO, EL
ODING, VG
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (04): : 547 - 548
[4] GENERATION-RECOMBINATION NOISE IN P-TYPE SILICON
BOSMAN, G
ZIJLSTRA, RJJ
[J]. SOLID-STATE ELECTRONICS, 1982, 25 (04) : 273 - 280
[5] INFLUENCE OF ILLUMINATION ON LIFETIME OF NONEQUILIBRIUM CARRIERS IN P-TYPE INSB
VOLKOV, AS
GALAVANO.VV
[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 1 (09): : 1183 - &
[6] INVESTIGATION OF NONEQUILIBRIUM CARRIER LIFETIME AND NOISE IN P-TYPE INSB
BERKELIE.AD
VOLKOV, AS
GALAVANO.VV
NASLEDOV.DN
[J]. SOVIET PHYSICS SOLID STATE,USSR, 1965, 7 (06): : 1545 - +
[7] GENERATION-RECOMBINATION NOISE OF P-INSB
KANZAKI, K
MIYAO, W
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (06) : 1113 - 1116
[8] INFLUENCE OF HYDROSTATIC PRESSURE ON LIFETIME OF NONEQUILIBRIUM CARRIERS IN P-TYPE INSB
VOLKOV, AS
GALAVANO.VV
IZVOZCHI.BV
TAKSAMI, IA
[J]. SOVIET PHYSICS SOLID STATE,USSR, 1967, 8 (12): : 2958 - +
[9] GENERATION-RECOMBINATION NOISE IN AN INSB PHOTORESISTOR
KOLACHEV.NN
ROZHDEST.VV
[J]. SOVIET PHYSICS SOLID STATE,USSR, 1965, 7 (04): : 898 - +
[10] GENERATION-RECOMBINATION NOISE IN P-TYPE GOLD-DOPED GERMANIUM
NEURINGER, L
BERNARD, W
[J]. PHYSICAL REVIEW LETTERS, 1961, 6 (09) : 455 - &

← 1 2 3 4 5 →