共 50 条
- [1] INFLUENCE OF HYDROSTATIC PRESSURE ON LIFETIME OF NONEQUILIBRIUM CARRIERS IN P-TYPE INSB SOVIET PHYSICS SOLID STATE,USSR, 1967, 8 (12): : 2958 - +
- [2] LIFETIME OF NONEQUILIBRIUM CARRIERS AND GENERATION-RECOMBINATION NOISE IN P-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (10): : 1317 - 1319
- [3] INVESTIGATION OF NONEQUILIBRIUM CARRIER LIFETIME AND NOISE IN P-TYPE INSB SOVIET PHYSICS SOLID STATE,USSR, 1965, 7 (06): : 1545 - +
- [4] THE EFFECT OF OXYGEN ON THE LIFETIME OF NONEQUILIBRIUM CARRIERS IN P-TYPE SILICON SOVIET PHYSICS-SOLID STATE, 1962, 4 (05): : 1010 - 1011
- [5] LIFETIME OF NONEQUILIBRIUM CARRIERS IN P-TYPE GAAS IRRADIATED WITH OXYGEN IONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (02): : 217 - 218
- [6] RECOMBINATION OF NONEQUILIBRIUM CARRIERS IN P-TYPE INSB AT TEMPERATURES BELOW 77 DEGREES K SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 4 (01): : 142 - &
- [7] RECOMBINATION OF NONEQUILIBRIUM CARRIERS IN P-TYPE PBSNSE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (06): : 765 - 768
- [8] PRESSURE AND TEMPERATURE DEPENDENCES OF LIFETIME OF NONEQUILIBRIUM CARRIERS IN N-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (02): : 242 - 244
- [9] LIFETIME OF MAJORITY CARRIERS IN P-TYPE GAAS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 3 (03): : 283 - &
- [10] LIFETIME OF NONEQUILIBRIUM CARRIERS IN INSB AT 78 DEGREES K SOVIET PHYSICS SEMICONDUCTORS-USSR, 1967, 1 (06): : 788 - +