共 50 条
- [21] RECOMBINATION PROCESSES IN P-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1967, 1 (02): : 129 - &
- [27] INFLUENCE OF COMPENSATION OF A DEEP LEVEL ON ELECTRICAL PROPERTIES OF P-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 3 (02): : 238 - +
- [28] THE LIFETIME OF ADDED CARRIERS IN INSB PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1955, 68 (12): : 985 - 990
- [30] INFLUENCE OF OXYGEN ON MOBILITY OF CARRIERS IN P-TYPE GALLIUM PHOSPHIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (08): : 1363 - +