GALVANOMAGNETIC ANISOTROPY OF P-TYPE INSB

被引：4

作者：

OHMURA, Y

机构：

来源：

关键词：

D O I：

10.1143/JPSJ.21.1886

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

下载

页码：1886 / &

共 50 条

[1] ANISOTROPY OF CONDUCTIVITY OF P-TYPE INSB UNDER UNIAXIAL COMPRESSION
VALYASHKO, EG
KOSHELEV, OG
PLESKACHEVA, TB
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (11): : 1434 - 1435
[2] ANISOTROPY OF THE GALVANOMAGNETIC EFFECTS IN P-TYPE BI2TE3
EFIMOVA, BA
KORENBLUM, IY
NOVIKOV, VI
OSTROUMOV, AG
SOVIET PHYSICS-SOLID STATE, 1962, 3 (09): : 2004 - 2014
[3] GALVANOMAGNETIC EFFECTS IN P-TYPE GERMANIUM
JOHANNESSEN, JS
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 12 (01): : 251 - +
[4] GALVANOMAGNETIC EFFECTS IN P-TYPE SILICON
LONG, D
PHYSICAL REVIEW, 1957, 107 (03): : 672 - 677
[5] GALVANOMAGNETIC EFFECTS IN P-TYPE ALSB
STIRN, RJ
BECKER, WM
PHYSICAL REVIEW, 1966, 148 (02): : 907 - &
[6] ANISOTROPY OF SPIN-RESONANCE POSITION IN P-TYPE INSB INVERSION LAYER
CHEN, YF
SOLID STATE COMMUNICATIONS, 1990, 76 (06) : 839 - 842
[7] Anisotropy of spin-resonance position in p-type InSb inversion layer
Chen, Yang-Fang, 1600, (76):
[8] GALVANOMAGNETIC EFFECTS IN DEFORMED P-TYPE GE
MITIN, VV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (02): : 149 - 152
[9] GALVANOMAGNETIC EFFECTS IN P-TYPE BISMUTH TELLURIDE
DRABBLE, JR
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1958, 72 (465): : 380 - 390
[10] GALVANOMAGNETIC EFFECTS IN P-TYPE GERMANIUM FILMS
MITIN, VV
TKHORIK, YA
SHVARTS, YM
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (07): : 835 - 837