共 50 条
- [41] THE PHOTOMAGNETIC EFFECT IN P-TYPE INSB AT ROOM TEMPERATURE SOVIET PHYSICS-SOLID STATE, 1962, 3 (11): : 2400 - 2404
- [42] MAGNETOPHONON OSCILLATIONS OF LONGITUDINAL MAGNETORESISTANCE OF P-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1968, 2 (03): : 356 - +
- [43] GENERATION-RECOMBINATION NOISE IN P-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1967, 1 (05): : 550 - +
- [44] MECHANISM OF FUNDAMENTAL ABSORPTION OF LIGHT IN P-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 5 (12): : 2078 - &
- [45] TRANSPORT PHENOMENA IN HEAVILY DOPED P-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (08): : 1005 - 1007
- [46] ELECTRICAL PROPERTIES OF P-TYPE INSB AT LOW TEMPERATURES SOVIET PHYSICS-SOLID STATE, 1959, 1 (04): : 514 - 515
- [47] CYCLOTRON RESONANCE OF HOT ELECTRONS IN P-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 5 (01): : 137 - +
- [48] CYCLOTRON RESONANCE IN P-TYPE INSB AT MILLIMETRE WAVELENGTHS PHYSICS LETTERS, 1963, 6 (02): : 143 - 145
- [49] CONDUCTION IN MODERATELY DOPED COMPENSATED P-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 8 (06): : 689 - 692
- [50] TEMPERATURE DEPENDENCE OF THERMOELECTRIC POWER OF P-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 4 (06): : 912 - +