共 50 条
- [1] TEMPERATURE DEPENDENCE OF FUNDAMENTAL ABSORPTION IN LIGHTLY DOPED P-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 2 (09): : 1086 - +
- [2] INFLUENCE OF TEMPERATURE ON FUNDAMENTAL ABSORPTION-SPECTRUM OF PURE P-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 5 (12): : 2075 - +
- [3] FUNDAMENTAL ABSORPTION AND REFLECTIVITY SPECTRA OF P-TYPE GASB PHYSICA STATUS SOLIDI, 1970, 42 (01): : K101 - +
- [4] ABSORPTION SATURATION OF HEAVY-HOLE TO LIGHT-HOLE BAND TRANSITIONS IN P-TYPE INSB PHYSICAL REVIEW B, 1988, 38 (14): : 9778 - 9789
- [5] LONG-WAVELENGTH INFRARED ABSORPTION SPECTRA OF P-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 3 (03): : 367 - &
- [6] MECHANISM OF CARRIER SCATTERING IN P-TYPE INSB AT 8 DEGREES K SOVIET PHYSICS SOLID STATE,USSR, 1965, 6 (11): : 2680 - +
- [7] OSCILLATIONS IN COMPENSATED P-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 7 (08): : 1102 - 1103
- [8] CYCLOTRON RESONANCE IN P-TYPE INSB BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1968, 13 (01): : 94 - &
- [9] RECOMBINATION PROCESSES IN P-TYPE INSB SOVIET PHYSICS SEMICONDUCTORS-USSR, 1967, 1 (02): : 129 - &