Role of oxygen contaminant on the physical properties of sputtered AlN thin films

被引：0
|
作者：
机构：
[1] Signore, M.A.
[2] Taurino, A.
[3] Valerini, D.
[4] Rizzo, A.
[5] Farella, I.
[6] Catalano, M.
[7] Quaranta, F.
[8] Siciliano, P.
来源：
Taurino, A. (antonietta.taurino@le.imm.cnr.it) | 1600年 / Elsevier Ltd卷 / 649期
关键词：
The paper deals with the role of the oxygen contamination; coming from residual gas atmosphere in the deposition chamber; on the physical properties of AlN thin films; sputtered in Ar + N2 working gas; at different values of nitrogen flux percentages; and without substrate heating. Contaminant concentration varies with the nitrogen partial pressure in the working gas mixture. Oxygen atoms are incorporated into the growing films due to their higher affinity towards Al atoms compared to N atoms. Oxygen inclusion produces important modifications in the structural; chemical; optical and electrical properties of the AlN thin films. Therefore; contamination can play a crucial role for the tuning of the physical characteristics of sputtered materials. © 2015 Elsevier B.V. All rights reserved;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
下载
收藏
相关论文
共 50 条
  • [1] Role of oxygen contaminant on the physical properties of sputtered AlN thin films
    Signore, M. A.
    Taurino, A.
    Valerini, D.
    Rizzo, A.
    Farella, I.
    Catalano, M.
    Quaranta, F.
    Siciliano, P.
    JOURNAL OF ALLOYS AND COMPOUNDS, 2015, 649 : 1267 - 1272
  • [2] Structural and Optical properties of Sputtered AlN Thin Films
    Panda, Padmalochan
    Ramaseshan, R.
    Sundari, S. Tripura
    Rajaraman, R.
    Suematsu, H.
    Dash, S.
    61ST DAE-SOLID STATE PHYSICS SYMPOSIUM, 2017, 1832
  • [3] Piezoelectric Properties of Sputtered AlN Thin Films and Their Applications
    Schmid, U.
    Sanchez-Rojas, J. L.
    SMART MATERIALS & MICRO/NANOSYSTEMS, 2009, 54 : 41 - 49
  • [4] Effects of oxygen on the properties of sputtered molybdenum thin films
    Yamaguchi, Tetsuya, 1600, (30):
  • [5] Low-temperature growth and measurement of oxygen in reactively sputtered AlN thin films
    Kumar, Sunil
    Tansley, T.L.
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1995, 34 (8 A): : 4154 - 4158
  • [6] Influence of oxygen and argon on the crystal quality and piezoelectric response of AlN sputtered thin films
    Vergara, L
    Clement, M
    Iborra, E
    Sanz-Hervás, A
    García-López, J
    Morilla, Y
    Sangrador, J
    Respaldiza, MA
    DIAMOND AND RELATED MATERIALS, 2004, 13 (4-8) : 839 - 842
  • [7] Piezoelectric properties and residual stress of sputtered AlN thin films for MEMS applications
    Iborra, E
    Olivares, J
    Clement, M
    Vergara, L
    Sanz-Hervás, A
    Sangrador, J
    SENSORS AND ACTUATORS A-PHYSICAL, 2004, 115 (2-3) : 501 - 507
  • [8] Synthesis and structural properties of DC sputtered AlN thin films on different substrates
    Shanmugan, S.
    Mutharasu, D.
    Anithambigai, P.
    Teeba, N.
    Razak, I. Abdul
    JOURNAL OF CERAMIC PROCESSING RESEARCH, 2013, 14 (03): : 385 - 390
  • [9] EFFECTS OF OXYGEN ON THE PROPERTIES OF SPUTTERED MOLYBDENUM THIN-FILMS
    YAMAGUCHI, T
    MIYAGAWA, R
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (9A): : 2069 - 2073
  • [10] Physical and optical properties of sputtered lithium niobate thin films
    Lu, DX
    Wong, EMW
    Pun, EYB
    Chung, PS
    ELECTRO-OPTIC AND SECOND HARMONIC GENERATION MATERIALS, DEVICES, AND APPLICATIONS, 1996, 2897 : 361 - 368
12345