Synthesis and structural properties of DC sputtered AlN thin films on different substrates

被引:0
|
作者
Shanmugan, S. [1 ]
Mutharasu, D. [1 ]
Anithambigai, P. [1 ]
Teeba, N. [1 ]
Razak, I. Abdul [2 ]
机构
[1] USM, Nano Optoelect Res Lab, Sch Phys, Minden 11800, Pulau Penang, Malaysia
[2] USM, Xray Crystallog Lab, Sch Phys, Minden 11800, Pulau Penang, Malaysia
来源
关键词
AlN; Thin films; Structural properties; Sputtering; ALUMINUM NITRIDE COATINGS; OPTICAL-PROPERTIES; EPITAXIAL-GROWTH; AIN FILMS; OXIDATION; SI(111); VACUUM;
D O I
暂无
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Aluminum Nitride thin films were prepared over different substrates using DC sputtering at room temperature. The prepared films were mostly c-axis oriented on Al substrates. Poor crystalline were recorded for both glass and Si substrates. Cu substrates supported the growth of cubic (2 0 0) AlN. Annealing process showed noticeable effect on c-axis AlN prepared over Al substrates. The observed crystallite sizes were between 9 nm and 79 nm. The applied stress during the growth were tensile nature and showed high value for (1 1 0) phase on Al substrates. The structural parameters such as dislocation density, micro strain etc., were dependent not only the orientation of AlN crystals but also the substrates used. Annealing process showed noticeable reduction on residual stress and micro strain and improvement on crystallite growth as well as the dislocation density.
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收藏
页码:385 / 390
页数:6
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