Structural and Optical properties of Sputtered AlN Thin Films

被引：1

作者：

Panda, Padmalochan ^{[1
]}

Ramaseshan, R. ^{[1
]}

Sundari, S. Tripura ^{[1
]}

Rajaraman, R. ^{[1
]}

Suematsu, H. ^{[2
]}

Dash, S. ^{[1
]}

机构：

[1] HBNI, Indira Gandhi Ctr Atom Res, Mat Sci Grp, Kalpakkam 603102, Tamil Nadu, India

[2] Nagaoka Univ Technol, Extreme Energy Dens Res Inst, Nagaoka, Niigata, Japan

来源：

61ST DAE-SOLID STATE PHYSICS SYMPOSIUM | 2017年 / 1832卷

关键词：

Thin films; Sputtering; Raman; Cross-sectional TEM; Ellipsometry;

D O I：

10.1063/1.4980521

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Wurtzite type AlN thin films were grown on Si (100) substrate using DC reactive sputtering with varying substrate temperatures (35-600 degrees C). The phonon vibrational study of these films was performed by Raman Spectroscopy, where E-2 (High) mode was observed with a movement of peak position from red shift to blue shift due to change in residual stress. Cross sectional TEM micrograph of these AlN films showed a columnar structure. Using phase modulated ellipsometry, refractive index and extinction co-efficient of the film were extracted based on new amorphous model and found to be 2.2 and 0.03 at a wavelength of 250 nm, respectively.

引用

页数：3

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