Properties of high-purity charge for the production of bulk single crystals of silicon carbide

The granulometric and thermophysical characteristics of SiC charge powders, as well as imported ultrapure powder (GMF-CVD, Japan) were studied. The charge was obtained by self-propagating high-temperature synthesis. It is shown that the domestic SiC dispersed material is not inferior to foreign analogues in a number of characteristics and can be successfully used for the industrial production of SiC single-crystal. Based on the research results, a technological route was developed and a bulk SiC single crystal with a diameter of 100 mm was grown on the basis of one of the synthesized powders. © 2022 Federal Informational-Analytical Center of the Defense Industry. All rights reserved.