Properties of high-purity charge for the production of bulk single crystals of silicon carbide

被引：0
|
作者：
Skvortsov D.A. [1 ]
Sidorov R.I. [1 ]
Mamin B.F. [1 ]
Neverov V.A. [1 ]
机构：
[1] Ogarev Mordovia State University, 68 Bolshevistskaya st., Saransk
来源：
Applied Physics | 2022年 / 06期
关键词：
powder; silicon carbide; thermophysical characteristics;
D O I：
10.51368/1996-0948-2022-6-76-82
中图分类号：
学科分类号：
摘要：
The granulometric and thermophysical characteristics of SiC charge powders, as well as imported ultrapure powder (GMF-CVD, Japan) were studied. The charge was obtained by self-propagating high-temperature synthesis. It is shown that the domestic SiC dispersed material is not inferior to foreign analogues in a number of characteristics and can be successfully used for the industrial production of SiC single-crystal. Based on the research results, a technological route was developed and a bulk SiC single crystal with a diameter of 100 mm was grown on the basis of one of the synthesized powders. © 2022 Federal Informational-Analytical Center of the Defense Industry. All rights reserved.
引用
收藏
页码：76 / 82
页数：6
相关论文
共 50 条
  • [31] GROWTH OF HIGH-PURITY SINGLE-CRYSTALS OF ARSENIC
    UHER, C
    JOURNAL OF CRYSTAL GROWTH, 1983, 62 (01) : 141 - 144
  • [32] Study of a Subfluoride Process for Production of High-Purity Silicon
    Vodop'yanov, A. G.
    Kozhevnikov, G. N.
    Kuz'min, V. G.
    RUSSIAN JOURNAL OF APPLIED CHEMISTRY, 2012, 85 (01) : 12 - 15
  • [33] Study of a subfluoride process for production of high-purity silicon
    A. G. Vodop’yanov
    G. N. Kozhevnikov
    V. G. Kuz’min
    Russian Journal of Applied Chemistry, 2012, 85 : 12 - 15
  • [34] A review of high-purity quartz for silicon production in Australia
    Jennings, A.
    Senior, A.
    Guerin, K.
    Main, P.
    Walsh, J.
    AUSTRALIAN JOURNAL OF EARTH SCIENCES, 2024,
  • [35] HIGH-PURITY POLYCRYSTALLINE SILICON PRODUCTION FOR ELECTRONIC APPLICATIONS
    MCCORMICK, JR
    JOURNAL OF METALS, 1985, 37 (11): : A25 - A25
  • [36] Properties of erbium luminescence in bulk crystals of silicon carbide
    R. A. Babunts
    V. A. Vetrov
    I. V. Il’in
    E. N. Mokhov
    N. G. Romanov
    V. A. Khramtsov
    P. G. Baranov
    Physics of the Solid State, 2000, 42 : 829 - 835
  • [37] TRANSIENT CHARGE-CARRIER DIFFUSION IN HIGH-PURITY SILICON
    GREEN, M
    GREENBERG, IN
    SOLID-STATE ELECTRONICS, 1960, 1 (01) : 85 - &
  • [38] Properties of erbium luminescence in bulk crystals of silicon carbide
    Babunts, RA
    Vetrov, VA
    Il'in, IV
    Mokhov, EN
    Romanov, NG
    Khramtsov, VA
    Baranov, PG
    PHYSICS OF THE SOLID STATE, 2000, 42 (05) : 829 - 835
  • [39] NITRIDATION OF HIGH-PURITY SINGLE-CRYSTAL SILICON
    GREGORY, OJ
    RICHMAN, MH
    METALLOGRAPHY, 1982, 15 (02): : 157 - 162
  • [40] STEADY-STATE DIFFUSION OF CHARGE CARRIERS IN HIGH-PURITY SINGLE-CRYSTAL SILICON
    GREEN, M
    GREENBERG, IN
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1959, 106 (08) : C204 - C204
12345