Properties of high-purity charge for the production of bulk single crystals of silicon carbide

被引：0

作者：

Skvortsov D.A. ^{[1
]}

Sidorov R.I. ^{[1
]}

Mamin B.F. ^{[1
]}

Neverov V.A. ^{[1
]}

机构：

[1] Ogarev Mordovia State University, 68 Bolshevistskaya st., Saransk

来源：

Applied Physics | 2022年 / 06期

关键词：

powder; silicon carbide; thermophysical characteristics;

D O I：

10.51368/1996-0948-2022-6-76-82

中图分类号：

学科分类号：

摘要：

The granulometric and thermophysical characteristics of SiC charge powders, as well as imported ultrapure powder (GMF-CVD, Japan) were studied. The charge was obtained by self-propagating high-temperature synthesis. It is shown that the domestic SiC dispersed material is not inferior to foreign analogues in a number of characteristics and can be successfully used for the industrial production of SiC single-crystal. Based on the research results, a technological route was developed and a bulk SiC single crystal with a diameter of 100 mm was grown on the basis of one of the synthesized powders. © 2022 Federal Informational-Analytical Center of the Defense Industry. All rights reserved.

引用

页码：76 / 82

页数：6

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