Thermionic Field Emission in the Lifetime Estimation of p-GaN Gate HEMTs

被引：0
|
作者：
Greco, G. [1 ]
Fiorenza, P. [1 ]
Giannazzo, F. [1 ]
Vivona, M. [1 ]
Venuto, C. [2 ]
Iucolano, F. [2 ]
Roccaforte, F. [1 ]
机构：
[1] CNR-IMM, Catania,95121, Italy
[2] STMicroelectronics, Catania,95121, Italy
来源：
IEEE Electron Device Letters | 2024年 / 45卷 / 10期
关键词：
Thermionic emission;
D O I：
10.1109/LED.2024.3438807
中图分类号：
学科分类号：
摘要：
引用
下载
收藏
页码：1724 / 1727
相关论文
共 50 条
  • [41] Design Optimization of a New Nanostructured P-GaN Gate for Normally-off GaN HEMTs
    Rouly, Daniel
    Tasselli, Josiane
    Austin, Patrick
    Haloui, Chaymaa
    Isoird, Karine
    Morancho, Frederic
    2022 29TH INTERNATIONAL CONFERENCE ON MIXED DESIGN OF INTEGRATED CIRCUITS AND SYSTEM (MIXDES 2022), 2022, : 105 - 109
  • [42] Recessed and P-GaN Regrowth Gate Development for Normally-off AlGaN/GaN HEMTs
    Haloui, Chaymaa
    Toulon, Gaetan
    Tasselli, Josiane
    Cordier, Yvon
    Frayssinet, Eric
    Isoird, Karine
    Morancho, Frederic
    Gavelle, Mathieu
    PROCEEDINGS OF 2020 27TH INTERNATIONAL CONFERENCE ON MIXED DESIGN OF INTEGRATED CIRCUITS AND SYSTEM (MIXDES), 2020, : 181 - 184
  • [43] Study on the single-event burnout mechanism of p-GaN gate AlGaN/GaN HEMTs
    Wang, Xiaohu
    Zheng, Xuefeng
    Lin, Danmei
    Zhang, Hao
    Cao, Yanrong
    Lv, Ling
    Wang, Yingzhe
    Hu, Peipei
    Liu, Jie
    Ma, Xiaohua
    Hao, Yue
    APPLIED PHYSICS LETTERS, 2024, 124 (17)
  • [44] An ASM-Based Semiempirical Model for AlGaN/GaN Power HEMTs With p-GaN Gate
    Shi, Tianxiang
    Lei, Yue
    Wang, Yan
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 71 (07) : 4112 - 4118
  • [45] Roles of Hole Trap on Gate Leakage of p-GaN HEMTs at Cryogenic Temperatures
    Jiang, Zuoheng
    Wang, Xinyu
    Zhao, Junlei
    Chen, Junting
    Tang, Jinjin
    Wang, Chengcai
    Chen, Haohao
    Huang, Sen
    Chen, Xiaolong
    Hua, Mengyuan
    IEEE ELECTRON DEVICE LETTERS, 2023, 44 (10) : 1612 - 1615
  • [46] Charge trapping related channel modulation instability in P-GaN gate HEMTs
    Li, Xueyang
    Xie, Gang
    Tang, Cen
    Sheng, Kuang
    MICROELECTRONICS RELIABILITY, 2016, 65 : 35 - 40
  • [47] Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs
    Wang, Jie
    Chen, Zhanfei
    You, Shuzhen
    Bakeroot, Benoit
    Liu, Jun
    Decoutere, Stefaan
    MICROMACHINES, 2021, 12 (02)
  • [48] Gate Reliability of p-GaN Power HEMTs under Pulsed Stress Condition
    Millesimo, M.
    Sangiorgi, E.
    Fiegna, C.
    Tallarico, A. N.
    Bakeroot, B.
    Borga, M.
    Posthuma, N.
    Decoutere, S.
    2022 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2022,
  • [49] Hybrid Gate p-GaN Power HEMTs Technology for Enhanced Vth Stability
    Zhang, Chi
    Li, Sheng
    Liu, Siyang
    Lu, Weihao
    Ma, Yanfeng
    Wei, Jiaxing
    Zhang, Long
    Sun, Weifeng
    Wang, Denggui
    Zhou, Jianjun
    Bai, Song
    2022 INTERNATIONAL ELECTRON DEVICES MEETING, IEDM, 2022,
  • [50] Observation of Dynamic VTH of p-GaN Gate HEMTs by Fast Sweeping Characterization
    Li, Xiangdong
    Bakeroot, Benoit
    Wu, Zhicheng
    Amirifar, Nooshin
    You, Shuzhen
    Posthuma, Niels
    Zhao, Ming
    Liang, Hu
    Groeseneken, Guido
    Decoutere, Stefaan
    IEEE ELECTRON DEVICE LETTERS, 2020, 41 (04) : 577 - 580
12345