Thermionic Field Emission in the Lifetime Estimation of p-GaN Gate HEMTs

被引：0
|
作者：
Greco, G. [1 ]
Fiorenza, P. [1 ]
Giannazzo, F. [1 ]
Vivona, M. [1 ]
Venuto, C. [2 ]
Iucolano, F. [2 ]
Roccaforte, F. [1 ]
机构：
[1] CNR-IMM, Catania,95121, Italy
[2] STMicroelectronics, Catania,95121, Italy
来源：
IEEE Electron Device Letters | 2024年 / 45卷 / 10期
关键词：
Thermionic emission;
D O I：
10.1109/LED.2024.3438807
中图分类号：
学科分类号：
摘要：
引用
下载
收藏
页码：1724 / 1727
相关论文
共 50 条
  • [21] Breakdown enhancement and hot electrons mitigation for p-GaN gate HEMTs by electric field modulation
    Shen, Jingyu
    Jing, Liang
    Li, Ping
    Wu, Hao
    Hu, Shengdong
    RESULTS IN PHYSICS, 2023, 53
  • [22] A Comparative Study on P-GaN HEMTs with Schottky/Ohmic Gate Contacts
    Lu, Wenqing
    Ren, Kailin
    An, Yuan
    Wu, Zhuang
    Yin, Luqiao
    Zhang, Jianhua
    2022 19TH CHINA INTERNATIONAL FORUM ON SOLID STATE LIGHTING & 2022 8TH INTERNATIONAL FORUM ON WIDE BANDGAP SEMICONDUCTORS, SSLCHINA: IFWS, 2022, : 58 - 60
  • [23] Gate leakage current sensing for in situ temperature monitoring of p-GaN gate HEMTs
    Borghese, A.
    Riccio, M.
    Longobardi, G.
    Maresca, L.
    Breglio, G.
    Irace, A.
    MICROELECTRONICS RELIABILITY, 2020, 114
  • [24] Review of technology for normally-off HEMTs with p-GaN gate
    Greco, Giuseppe
    Iucolano, Ferdinando
    Roccaforte, Fabrizio
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2018, 78 : 96 - 106
  • [25] The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs
    Millesimo, M.
    Borga, M.
    Bakeroot, B.
    Posthuma, N.
    Decoutere, S.
    Sangiorgi, E.
    Fiegna, C.
    Tallarico, A. N.
    IEEE ELECTRON DEVICE LETTERS, 2022, 43 (11) : 1846 - 1849
  • [26] Monolithic Integration of Gate Driver and Protection Modules With P-GaN Gate Power HEMTs
    Xu, Han
    Tang, Gaofei
    Wei, Jin
    Zheng, Zheyang
    Chen, Kevin J.
    IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 2022, 69 (07) : 6784 - 6793
  • [27] VTH Instability of p-GaN Gate HEMTs Under Static and Dynamic Gate Stress
    He, Jiabei
    Tang, Gaofei
    Chen, Kevin J.
    IEEE ELECTRON DEVICE LETTERS, 2018, 39 (10) : 1576 - 1579
  • [28] High VTH and Improved Gate Reliability in P-GaN Gate HEMTs With Oxidation Interlayer
    Jia, Mao
    Hou, Bin
    Yang, Ling
    Jia, Fuchun
    Niu, Xuerui
    Du, Jiale
    Chang, Qingyuan
    Zhang, Meng
    Wu, Mei
    Zhang, Xinchuang
    Lu, Hao
    Ma, Xiaohua
    Hao, Yue
    IEEE ELECTRON DEVICE LETTERS, 2023, 44 (09) : 1404 - 1407
  • [29] Improved Gate ESD Behaviors of p-GaN Power HEMTs by Hybrid Gate Technology
    Ma, Yanfeng
    Li, Sheng
    Wang, Lixi
    Yang, Haoxiang
    Lu, Weihao
    Li, Mingfei
    Ma, Jie
    Ye, Ran
    Wang, Denggui
    Zhou, Jianjun
    Wei, Jiaxing
    Zhang, Long
    Liu, Siyang
    Sun, Weifeng
    2024 36TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND IC S, ISPSD 2024, 2024, : 299 - 302
  • [30] Modeling Gate Leakage Current for p-GaN Gate HEMTs With Engineered Doping Profile
    Alaei, Mojtaba
    Borga, Matteo
    Fabris, Elena
    Decoutere, Stefaan
    Lauwaert, Johan
    Bakeroot, Benoit
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2024, 71 (08) : 4563 - 4569
12345