Thermionic Field Emission in the Lifetime Estimation of p-GaN Gate HEMTs

被引：0
|
作者：
Greco, G. [1 ]
Fiorenza, P. [1 ]
Giannazzo, F. [1 ]
Vivona, M. [1 ]
Venuto, C. [2 ]
Iucolano, F. [2 ]
Roccaforte, F. [1 ]
机构：
[1] CNR-IMM, Catania,95121, Italy
[2] STMicroelectronics, Catania,95121, Italy
来源：
IEEE Electron Device Letters | 2024年 / 45卷 / 10期
关键词：
Thermionic emission;
D O I：
10.1109/LED.2024.3438807
中图分类号：
学科分类号：
摘要：
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页码：1724 / 1727
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