Polishing Diamond Substrates using Gas Cluster Ion Beam (GCIB) Irradiation for the Direct Bonding to Power Devices

被引：0
|
作者：
Wang, Junsha [1 ]
Takeuchi, Kai [1 ]
Kataoka, Izumi [2 ]
Suga, Tadatomo [1 ]
机构：
[1] Meisei University, Collaborative Research Center, Tokyo,1918506, Japan
[2] Iipt Inc., Tokyo,1810013, Japan
来源：
2022 International Conference on Electronics Packaging, ICEP 2022 | 2022年
关键词：
Compilation and indexing terms; Copyright 2024 Elsevier Inc;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
Diamonds - III-V semiconductors - Ion beams - Ions - Polishing - Power semiconductor devices - Silicon carbide - Substrates - Surface roughness
引用
收藏
页码：57 / 58
相关论文
共 50 条
  • [31] Ultrafine Particle Removal Using Gas Cluster Ion Beam Technology
    Dobashi, Kazuya
    Inai, Kensuke
    Saito, Misako
    Seki, Toshio
    Aoki, Takaaki
    Matsuo, Jiro
    IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 2013, 26 (03) : 328 - 334
  • [32] Diamond-defect engineering of NV-centers using ion beam irradiation
    Toural, J. L. Sanchez
    Garcia-Perez, J.
    Bernardo-Gavito, R.
    Granados, D.
    Andrino-Gomez, A.
    Garcia, G.
    Pau, J. L.
    Ramos, M. A.
    Gordillo, N.
    DIAMOND AND RELATED MATERIALS, 2025, 151
  • [33] Surface oxidation of Si assisted by irradiation with large gas cluster ion beam in an oxygen atmosphere
    Ichiki, K.
    Ninomiya, S.
    Seki, T.
    Aoki, T.
    Matsuo, J.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2007, 256 (01): : 350 - 353
  • [34] Effect of energy per atom (E/n) on the Ar gas cluster ion beam (Ar-GCIB) and O2+ cosputter process
    Wang, Shin-Kung
    Chang, Hsun-Yun
    Chu, Yi-Hsuan
    Kao, Wei-Lun
    Wu, Chen-Yi
    Lee, Yi-Wei
    You, Yun-Wen
    Chu, Kuo-Jui
    Hung, Shu-Hang
    Shyue, Jing-Jong
    ANALYST, 2019, 144 (10) : 3323 - 3333
  • [35] Molecular beam epitaxy on gas cluster ion beam-prepared GaSb substrates: Towards improved surfaces and interfaces
    Krishnaswami, Kannan
    Vangala, Shivashankar R.
    Dauplaise, Helen M.
    Allen, Lisa P.
    Dallas, Gordon
    Bakken, Daniel
    Bliss, David F.
    Goodhue, William D.
    JOURNAL OF CRYSTAL GROWTH, 2008, 310 (7-9) : 1619 - 1626
  • [36] A Combined Gas Cluster Ion Beam (GCIB) and Chemical-Mechanical Polish (CMP) Planarization Scheme for Tungsten Replacement Metal Gate (W-RMG)
    Tseng, Wei-Tsu
    Long, Justin
    Mohan, Kaushik
    Kagalwala, Taher
    Wu, Changhong
    Truong, Connie
    ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2016, 5 (07) : P404 - P408
  • [37] Study of diamond nucleation on silicon using direct negative carbon ion beam source
    Ko, YW
    Ahn, YO
    Sohn, MH
    Park, Y
    Kim, SI
    ION-SOLID INTERACTIONS FOR MATERIALS MODIFICATION AND PROCESSING, 1996, 396 : 221 - 226
  • [38] Atomic layer etching of Cu film using gas cluster ion beam
    Toyoda, Noriaki
    Ogawa, Akihiro
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2017, 50 (18)
  • [39] Room-Temperature Wafer Direct Bonding Using Surface Smoothing by Ion Beam
    Takagi, Hideki
    Kurashima, Yuichi
    Maeda, Atsuhiko
    Journal of Japan Institute of Electronics Packaging, 2015, 18 (07) : 469 - 473
  • [40] Elastic modulus measurement of ultrathin layer using gas cluster ion beam
    Tani, Hiroshi
    Lu, Renguo
    Koganezawa, Shinji
    Tagawa, Norio
    JOURNAL OF ADVANCED MECHANICAL DESIGN SYSTEMS AND MANUFACTURING, 2021, 15 (06)
12345