Study of diamond nucleation on silicon using direct negative carbon ion beam source

被引：0
|
作者：
Ko, YW [1 ]
Ahn, YO [1 ]
Sohn, MH [1 ]
Park, Y [1 ]
Kim, SI [1 ]
机构：
[1] STEVENS INST TECHNOL,DEPT PHYS & ENGN PHYS,HOBOKEN,NJ 07030
来源：
ION-SOLID INTERACTIONS FOR MATERIALS MODIFICATION AND PROCESSING | 1996年 / 396卷
关键词：
D O I：
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中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
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页码：221 / 226
页数：6
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