Development of Low On-Resistance and Low Reverse Recovery Charge Power MOSFET for Large-Capacity Communication Systems

This paper proposes a low on-resistance and low reverse recovery charge Power MOSFET Technologies for large-capacity communication systems. We have developed 150 V class power metal-oxide-semiconductor field-effect transistor (MOSFET) products featuring low on-resistance, gate charge, and reverse recovery charge characteristics by deep trench field plate technology and lifetime control technique. On-resistance reduced by 44% and reverse recovery charge reduced by 74% compared to the previous generation product. The device achieved peak power conversion efficiency of 94.6%. © 2024 The Institute of Electrical Engineers of Japan.