Impact of nucleation temperature on growth uniformity of GaN on 4-inch dome-patterned sapphire substrate

被引：0

作者：

Azmi, Nor Syafiqah ^{[1
]}

Mazlan, Muhammad Naim ^{[1
]}

Md Taib, Mohd Ikram ^{[1
]}

Ahmad, Mohd Anas ^{[1
]}

Samsuri, Mohd Shahrul Nizam ^{[1
]}

Mansor, Marwan ^{[2
]}

Hisyam, Muhammad Iznul ^{[2
]}

Abu Bakar, Ahmad Shuhaimi ^{[2
]}

Zainal, Norzaini ^{[1
]}

机构：

[1] Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, 11800 Bayan Lepas, Penang, Malaysia

[2] Low Dimensional Materials Research Centre (LDMRC), Department of Physics, Faculty of Science, Universiti Malaya, Kuala Lumpur,50603, Malaysia

来源：

Materials Science in Semiconductor Processing | 2024年 / 173卷

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摘要：

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