Influence of Electromagnetic Field Power and Temperature of Inductively Coupled Plasma Etching on the Uniformity of a Patterned Sapphire Substrate

Patterned sapphire substrate technology can improve the growth performance and luminous efficiency of light-emitting diodes. In this work, dry etching by inductively coupled plasma is studied and adjusted. The advantages of dry etching are good uniformity and high stability in a single chip. By changing the parameters of electromagnetic field power (etching power, bias power) and temperature, the influence of each parameter on uniformity and etching rate was studied. Controlling the power of inductively coupled plasma etching at a critical value of 1200 W can ensure stability at the maximum etching rate. The higher the temperature, the higher the pattern height and the smaller the bottom width. It is best to control the temperature around 13 degrees C. By changing the etching power, bias power, and temperature, the bias power was found to have a greater impact on the uniformity. If it is too large, the uniformity will become worse.