Impact of nucleation temperature on growth uniformity of GaN on 4-inch dome-patterned sapphire substrate

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作者：
Azmi, Nor Syafiqah [1 ]
Mazlan, Muhammad Naim [1 ]
Md Taib, Mohd Ikram [1 ]
Ahmad, Mohd Anas [1 ]
Samsuri, Mohd Shahrul Nizam [1 ]
Mansor, Marwan [2 ]
Hisyam, Muhammad Iznul [2 ]
Abu Bakar, Ahmad Shuhaimi [2 ]
Zainal, Norzaini [1 ]
机构：
[1] Institute of Nano Optoelectronics Research and Technology (INOR), Universiti Sains Malaysia, 11800 Bayan Lepas, Penang, Malaysia
[2] Low Dimensional Materials Research Centre (LDMRC), Department of Physics, Faculty of Science, Universiti Malaya, Kuala Lumpur,50603, Malaysia
来源：
Materials Science in Semiconductor Processing | 2024年 / 173卷
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