An analytical I-V model of SiC double-gate junctionless MOSFETs

被引：0
|
作者：
Li, Yi [1 ]
Zhou, Tao [1 ]
Guo, Zixuan [1 ]
Yang, Yuqiu [1 ]
Wu, Junyao [1 ]
Cai, Huan [1 ]
Wang, Jun [1 ]
Yin, Jungang [1 ]
Huang, Wenqing [1 ]
Zhang, Miao [1 ]
Hou, Nianxing [1 ]
Liu, Qin [2 ]
Deng, Linfeng [1 ]
机构：
[1] College of Electrical and Information Engineering, Hunan University, Hunan, Asia, Changsha,410082, China
[2] The State Key Laboratory of Advanced Power Semiconductor Devices, Zhuzhou CRRC Times Semiconductor Co., LTD, Asia, Zhuzhou,412001, China
来源：
Microelectronics Journal | / 154卷
基金：
中国国家自然科学基金;
关键词：
Junction gate field effect transistors - MOS devices - Oxide semiconductors - Poisson distribution - Poisson equation - Semiconducting silicon compounds;
D O I：
10.1016/j.mejo.2024.106445
中图分类号：
学科分类号：
摘要：
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