Temperature dependent current-voltage characteristics of Au/n-type Ge Schottky barrier diodes with graphene interlayer

被引：0

作者：

Khurelbaatar, Zagarzusem ^{[1
,2
]}

Kang, Min-Sung ^{[1
]}

Shim, Kyu-Hwan ^{[1
]}

Yun, Hyung-Joong ^{[1
,3
]}

Lee, Jouhan ^{[3
]}

Hong, Hyobong ^{[4
]}

Chang, Sung-Yong ^{[5
]}

Lee, Sung-Nam ^{[6
]}

Choi, Chel-Jong ^{[1
]}

机构：

[1] School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center (SPRC), Chonbuk National University, Jeonju,561-756, Korea, Republic of

[2] School of Information and Communication Technology, Mongolian University of Science and Technology, Ulaanbaatar,51-29, Mongolia

[3] Division of Material Science, Korea Basic Science Institute, Daejeon,305-806, Korea, Republic of

[4] IT Convergence Research Lab., Electronics and Telecommunications Research Institute (ETRI), Daejeon,307-700, Korea, Republic of

[5] Power Generation Lab., Korea Electric Power Research Institute (KEPRI), Daejeon,305-380, Korea, Republic of

[6] Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung,429-793, Korea, Republic of

来源：

Journal of Alloys and Compounds | 2015年 / 650卷

关键词：

This research was supported by a grant from the R&D Program (Grant no. 10045216 ) for Industrial Core Technology funded by the Ministry of Trade; Industry and Energy (MOTIE); Republic of Korea; and by Converging Research Center Program ( 2014M3C1A8048834 ) through the Ministry of Science; ICT & Future Planning; Republic of Korea . It was also financially supported by Basic Science Research Program ( NRF-2015R1A6A1A04020421 ) through the National Research Foundation of Korea (NRF) funded by the Ministry of Education;

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页码：658 / 663

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