Tunneling Explanation for the Temperature Dependence of Current-Voltage Characteristics of Pt/InN Schottky Barrier Diodes

被引：8
|
作者：
Rangel-Kuoppa, Victor-Tapio [1 ]
Suihkonen, Sami [1 ]
Sopanen, Markku [1 ]
Lipsanen, Harri [1 ]
机构：
[1] Helsinki Univ Technol, Optoelect Lab, Helsinki 02015, Finland
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2009年 / 48卷 / 07期
基金：
芬兰科学院;
关键词：
INDIUM NITRIDE; BAND-GAP; INN; STABILITY; GROWTH;
D O I：
10.1143/JJAP.48.070201
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The current-voltage (I-V) measurements on Pt/InN Schottky barrier diodes in the temperature range 10-280 K were done. It was found that the contact was Schottky up to 280 K, becoming irreversible ohmic for higher temperatures. The ideality factors were calculated using the Cheung method. The measurements were best explained using the tunnelling model. A value of m(perpendicular to)* = 0.237 m(0) is obtained. (C) 2009 The Japan Society of Applied Physics DOI: 10.1143/JJAP.48.070201
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页数：2
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