共 50 条
- [1] Electroluminescence and current-voltage characteristics of n-type porous silicon structures Technical Physics Letters, 1997, 23 : 445 - 447
- [2] INVESTIGATION OF CURRENT-VOLTAGE CHARACTERISTICS OF LAYERED SEMICONDUCTOR N-TYPE INSE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (01): : 44 - 47
- [5] CURRENT-VOLTAGE CHARACTERISTICS OF N-TYPE INSB IN QUANTIZING MAGNETIC-FIELDS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (05): : 640 - 641
- [6] INVESTIGATION OF CURRENT-VOLTAGE CHARACTERISTICS OF N-TYPE GERMANIUM COMPENSATED EXACTLY BY COPPER SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (07): : 831 - 834
- [7] INVESTIGATION OF CURRENT-VOLTAGE CHARACTERISTICS OF N-TYPE GERMANIUM COMPENSATED EXACTLY BY COPPER. 1978, 12 (07): : 831 - 834
- [8] SOME INVESTIGATIONS OF CURRENT-VOLTAGE CHARACTERISTICS OF GOLD-DOPED N-TYPE GERMANIUM SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 2 (12): : 1530 - +
- [9] CALCULATION OF A THERMALLY PRODUCED CURRENT-VOLTAGE CHARACTERISTIC OF N-TYPE PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1972, 12 (02): : K115 - &
- [10] CURRENT-VOLTAGE CHARACTERISTICS AND OSCILLATIONS OF CURRENT IN HIGH-RESISTIVITY N-TYPE CDSNP-2 SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (11): : 1422 - 1423