Analysis of Schottky barrier height in small contacts using a thermionic-field emission model

被引：0

作者：

Jang, Moongyu ^{[1
]}

Lee, Junghwan ^{[2
]}

机构：

[1] Basic Research Laboratory, ETRI, Daejeon, Korea, Republic of

[2] System IC R and D Division, HYNIX Semiconductor Inc., Cheongju, Korea, Republic of

来源：

| 2002年 / ETRI卷 / 24期

关键词：

Schottky barrier height - Secondary ion mass spectroscopy - Thermionic-field emission model - Transfer matrix method - Wentzel-Kramer-Brillouin approximation;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

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[1] Analysis of Schottky barrier height in small contacts using a thermionic-field emission model
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ETRI JOURNAL, 2002, 24 (06) : 455 - 461
[2] FIELD AND THERMIONIC-FIELD EMISSION IN SCHOTTKY BARRIERS
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[3] EFFECT OF THERMIONIC-FIELD EMISSION ON EFFECTIVE BARRIER HEIGHT LOWERING IN IN0.52AL0.48AS SCHOTTKY DIODES
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[9] DOMINATION OF THE THERMIONIC-FIELD EMISSION IN THE REVERSE IV CHARACTERISTICS OF N-TYPE GAAS SCHOTTKY CONTACTS
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[10] TUNNELING CURRENT DUE TO THERMIONIC-FIELD EMISSION IN AN AU-INS SCHOTTKY-BARRIER DIODE
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