Formation of epitaxial mesa structures on 4H-SiC (0001) and (112¯0) substrates

被引：0
|
作者：
Chen, Y. [1 ]
Kimoto, T. [1 ]
Takeuchi, Y. [2 ]
Matsunami, H. [1 ]
机构：
[1] Department of Electronic Science and Engineering, Kyoto University, Yoshida-honmachi, Sakyo, Kyoto 606-8501, Japan
[2] Research Laboratories, Denso Corporation, Minamiyama, Komenoki-cho, Nisshin, Aichi 470-0111, Japan
来源：
Materials Science Forum | 2002年 / 389-393卷 / 01期
关键词：
Anisotropy - Carbon - Epitaxial layers - Oxidation - Raman scattering - Silicon carbide - Substrates - Thermal effects;
D O I：
10.4028/www.scientific.net/msf.389-393.255
中图分类号：
学科分类号：
摘要：
SiC epitaxial mesa structures have been grown on 4H-SiC (0001) and (112¯0) substrates using a carbon mask for mesa growth. The carbon mask can be removed by thermal oxidation without surface degradation, resulting in the successful formation of SiC epitaxial mesa structures on SiC substrates. The lateral growth on the carbon mask was observed along the 〈112¯0〉 direction on off-axis (0001) and along the 〈0001〉 direction on (112¯0) substrates. On the off-axis (0001) substrate, 3C-SiC inclusion was detected by Raman scattering on the SiC mesa structure at the up-side of [112¯0] off-direction. On the (112¯0) substrate, 3C-SiC growth also occurred in the part of lateral growth along the 〈0001〉 direction, which was examined by XTEM. © 2002 Trans Tech Publications.
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页码：255 / 258
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