Polytype dependence of transition metal-related deep levels in 4H-, 6H- And 15R-SiC

被引：0

作者：

Grillenberger, J. ^{[1
]}

Achtziger, N. ^{[2
]}

Pasold, G. ^{[1
]}

Witthuhn, W. ^{[1
]}

机构：

[1] Institut für Festkörperphysik, Universität Jena, Max-Wien-Platz 1, DE-07743 Jena, Germany

[2] Fraunhofer-lnstitut für Integrierte Schaltungen IIS-A, Am Weichselgarten 3, DE-91058 Erlangen, Germany

来源：

| 2002年 / Trans Tech Publications Ltd卷 / 389-393期

关键词：

Crystal lattices - Deep level transient spectroscopy - Energy gap - Silicon carbide;

D O I：

10.4028/www.scientific.net/msf.389-393.573

中图分类号：

学科分类号：

摘要：

We present an extensive data set on deep states of the transition metals Ti, V, Cr, Ta, and W in the bandgap of the three SiC-polytypes 4H, 6H, and 15R. The data are compared with theoretical predictions for 3C-SiC. The influence of inequivalent lattice sites in Silicon Carbide on the level energies is discussed. © 2002 Trans Tech Publications.

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