Phosphorus diffusion from doped polysilicon through ultra-thin SiO2 films into Si substrates

被引：0

作者：

Tsubo, Yumiko ^{[1
]}

Komatsu, Yukio ^{[1
]}

Saito, Kazumasa ^{[1
]}

Matsumoto, Satoru ^{[1
]}

Sato, Yoshiyuki ^{[2
]}

Yamamoto, Ikunao ^{[3
]}

Yamashita, Yoshifumi ^{[3
]}

机构：

[1] Department of Electrical Engineering, Keio University, Hiyoshi, Yokohama 223-8522, Japan

[2] NTT Laboratories, Midori-cho, Mushashino, Tokyo 180-8585, Japan

[3] Okayama University, Faculty of Engineering, Tsushimanaka, Okayama 700-8530, Japan

来源：

Japanese journal of applied physics | 2000年 / 39卷 / 10 A期

基金：

英国惠康基金;

关键词：

Boundary conditions - Mathematical models - Oxygen - Phosphorus - Polysilicon - Semiconducting silicon - Semiconductor doping - Silica - Substrates - Ultrathin films;

D O I：

10.1143/jjap.39.l955

中图分类号：

学科分类号：

摘要：

The diffusion of phosphorus into ultra-thin oxides from phosphorus-doped polysilicon sources was studied. The two-boundary diffusion model can be applied to the diffusion of phosphorus in ultra-thin oxides, and the diffusivity and segregation coefficient were obtained based on the model. The dependence of the diffusivity on oxide thickness and drive-in ambients was investigated. The enhanced diffusion, which has been observed for boron diffusion in ultra-thin oxides, was not observed for phosphorus diffusion. For the diffusion in dry O2 and wet O2 ambients, the enhanced diffusion due to high phosphorus concentration in the polysilicon was observed.

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