An extended model for soft breakdown in ultra-thin SiO2 films

被引：0
|
作者：
Okhonin, S [1 ]
Fazan, P [1 ]
Baskin, E [1 ]
Guegan, G [1 ]
Deleonibus, S [1 ]
Martin, F [1 ]
机构：
[1] Swiss Fed Inst Technol, IMO, CH-1015 Lausanne, Switzerland
来源：
ASDAM 2000: THIRD INTERNATIONAL EUROCONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS - CONFERENCE PROCEEDINGS | 2000年
关键词：
D O I：
10.1109/ASDAM.2000.889475
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
This paper presents a complete picture of soft breakdown (SBD) including the behavior of conduction and valence band currents. This picture relies on trap-assisted inelastic conduction through deep traps. New electron energy loss data after SBD strongly support the model. We also report an energy loss of 0.8 eV for SILC-electrons in 3.6 nm oxide film.
引用
收藏
页码：175 / 178
页数：4
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