Effect of laser excitation energy on resistance of lateral geometry 4H-SiC photoconductive semiconductor switches

被引：0
|
作者：
Zhang, Yongping [1 ]
Chen, Zhizhan [1 ]
Shi, Wangzhou [1 ]
Zhang, Linwen [2 ]
Liu, Yi [2 ]
Chen, Yi [2 ]
机构：
[1] Department of Physics, Shanghai Normal University, Shanghai, China
[2] Institute of Fluid Physics, CAEP, P.O. Box 919-106, Mianyang, China
来源：
Qiangjiguang Yu Lizishu/High Power Laser and Particle Beams | 2015年 / 27卷 / 05期
关键词：
4H-SiC substrate - Electric signal - On-state resistance - Photoconductive semiconductor switches - Photoelectric response - Semi-insulating - State resistance - Wavelength lasers;
D O I：
10.11884/HPLPB201527.055003
中图分类号：
学科分类号：
摘要：
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