Novel high-density and high-speed NAND-type electrical erasable programmable read only memory

被引：0

作者：

Lin, Frank Ruei-Ling ^{[2
]}

Lee, Mao-Lin ^{[2
]}

Lin, Shih-Yun ^{[2
]}

Boe, Chen-Hao ^{[2
]}

Yeh, Ching-Pen ^{[1
]}

Wu, P.-H. ^{[1
]}

Wang, Wen-Sen ^{[1
]}

Ni, James ^{[1
]}

Hsu, Charles Ching-Hsiang ^{[2
]}

机构：

[1] Analogy Technology Corporation, Hsinchu, Taiwan

[2] Microlectron. Lab., Dep. of Electrical Engineering, National Tsing Hua University, Hsinchu 300, Taiwan

来源：

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers | 2000年 / 39卷 / 5 B期

关键词：

Current density - Dynamic random access storage - Electric fields - Electron tunneling - Integrated circuits - Threshold voltage;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A new NAND-type electrical erasable programmable read only memory (EEPROM), which employs (1) the novel in-cell temporary storage (ICTS) technique and (2) the novel multiple-wordline parallel programming (MWPP) method, is proposed to reduce the unit cell size and decrease the overall programming time. The ICTS approach latches input data directly to the selected EEPROM cells by an inverted channel with different input bitline voltages. After all the selected cells are latched to individual data, the MWPP method simultaneously raises all selected wordlines to high voltage to perform FN tunneling for parallel programming. The equivalent byte programming time is considerably reduced by employing parallel programming. The high-speed and high-density features further reduce the EEPROM testing cost for manufacturers and save programming time and cost for system providers.

引用

页码：2208 / 2214

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