Self-heating effect in novel SON device

被引：0
|
作者：
Wu, Dake [1 ]
Tian, Yu [1 ]
Bu, Weihai [1 ]
Huang, Ru [1 ]
机构：
[1] Institute of Microelectronics, Peking University, Beijing 100871, China
来源：
Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2005年 / 26卷 / 07期
关键词：
MOSFET devices;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
页码：1401 / 1405
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