Self-heating effect in novel SON device

被引：0

作者：

Wu, Dake ^{[1
]}

Tian, Yu ^{[1
]}

Bu, Weihai ^{[1
]}

Huang, Ru ^{[1
]}

机构：

[1] Institute of Microelectronics, Peking University, Beijing 100871, China

来源：

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors | 2005年 / 26卷 / 07期

关键词：

MOSFET devices;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

引用

页码：1401 / 1405

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