Fabrication and characterization of InGaAs/InAlAs insulated gate pseudomorphic HEMTs having a silicon interface control layer

被引：0

作者：

Xie, Y.-G. ^{[1
]}

Kasai, S. ^{[1
]}

Takahashi, H. ^{[1
]}

Jiang, C. ^{[1
]}

Hasegawa, H. ^{[1
]}

机构：

[1] RCIQE, Grad. Schl. of Elec. and Info. Eng., Hokkaido University, Sapporo-shi, 060-8628, Japan

来源：

IEICE Transactions on Electronics | 2001年 / E84-C卷 / 10期

关键词：

Electric breakdown - Fermi level - Interfaces (materials) - Leakage currents - Optimization - Semiconducting indium compounds - Semiconducting silicon - Semiconductor device manufacture - Semiconductor device structures - Transconductance - X ray photoelectron spectroscopy;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

A novel InGaAs/InAlAs insulated gate (IG) pseudomorphic high electron mobility transistor (PHEMT) having a silicon interface control layer (Si ICL) is successfully fabricated and characterized. Systematic efforts to characterize and optimize the insulated gate structure and the PHEMT fabrication process were made by using in-situ X-ray photoelectron spectroscopy (XPS) and capacitance-voltage (C-V) techniques. This led to successful fabrication of a novel IG-PHEMT showing excellent stable DC characteristics with a good pinch off and a high transconductance (177 mS/mm), very small gate leakage currents, very high gate breakdown voltages (about 40 V) and respectable RF characteristics fT= 9 GHz and fmax= 38 GHz.

引用

页码：1335 / 1343

共 33 条

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