Fabrication and characterization of novel lateral surface superlattice structure utilizing Schottky barrier height control by doped silicon interface control layers

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Hokkaido Univ, Sapporo, Japan ^{[1
]}

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Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap | / 2 B卷 / 1340-1347期

关键词：

Computer simulation - Electric current measurement - Electrons - Field effect transistors - Induced currents - Light modulation - Oscillations - Semiconducting silicon - Semiconductor device manufacture - Surfaces - Transconductance - Voltage measurement;

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共 40 条

[1] Fabrication and characterization of novel lateral surface superlattice structure utilizing Schottky barrier height control by doped silicon interface control layers
Kasai, S
Hasegawa, H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (2B): : 1340 - 1347
[2] CONTROL OF SCHOTTKY-BARRIER HEIGHT USING HIGHLY DOPED SURFACE-LAYERS
SHANNON, JM
SOLID-STATE ELECTRONICS, 1976, 19 (06) : 537 - 543
[3] CONTROL OF SCHOTTKY-BARRIER HEIGHT BY THIN HIGH-DOPED LAYER
HARIU, T
SHIBATA, Y
PROCEEDINGS OF THE IEEE, 1975, 63 (10) : 1523 - 1524
[4] Interface structure and schottky barrier height of buried CoSi2/Si(001) layers
Wemer, P.
Jaeger, W.
Schuppen, A.
Journal of Applied Physics, 1993, 74 (06):
[5] INTERFACE STRUCTURE AND SCHOTTKY-BARRIER HEIGHT OF BURIED COSI2/SI(001) LAYERS
WERNER, P
JAGER, W
SCHUPPEN, A
JOURNAL OF APPLIED PHYSICS, 1993, 74 (06) : 3846 - 3854
[6] THEORETICAL EXPLANATION OF THE CONTROL OF THE SCHOTTKY-BARRIER HEIGHT USING AN ULTRATHIN INTERFACE METAL LAYER
TUY, TQ
MOJZES, I
APPLIED PHYSICS LETTERS, 1990, 56 (17) : 1652 - 1654
[7] Precise control of Schottky barrier height in SrTiO3/SrRuO3 heterojunctions using ultrathin interface polar layers
Kumar, V. Sampath
Niranjan, Manish K.
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2016, 49 (25)
[8] CONTROL OF GAAS SCHOTTKY-BARRIER HEIGHT BY ULTRATHIN MOLECULAR-BEAM EPITAXY SI INTERFACE CONTROL LAYER
KOYANAGI, K
KASAI, S
HASEGAWA, H
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1993, 32 (1B): : 502 - 510
[9] A novel surface passivation structure for III-V compound semiconductors utilizing a silicon interface control layer and its application
Hashizume, T
Hasegawa, H
COMPOUND SEMICONDUCTOR SURFACE PASSIVATION AND NOVEL DEVICE PROCESSING, 1999, 573 : 45 - 56
[10] Novel surface passivation structure for III-V compound semiconductors utilizing a silicon interface control layer and its application
Hokkaido Univ, Sapporo, Japan
Mater Res Soc Symp Proc, (45-56):

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