Fabrication and characterization of novel lateral surface superlattice structure utilizing Schottky barrier height control by doped silicon interface control layers

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Hokkaido Univ, Sapporo, Japan [1 ]
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Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap | / 2 B卷 / 1340-1347期
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Computer simulation - Electric current measurement - Electrons - Field effect transistors - Induced currents - Light modulation - Oscillations - Semiconducting silicon - Semiconductor device manufacture - Surfaces - Transconductance - Voltage measurement;
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