AIGaN/GaN high electron mobility transistors with inclined-gate-recess structure

被引：0

作者：

Aoi, Yuma ^{[1
]}

Ohno, Yutaka ^{[1
]}

Kishimoto, Shigeru ^{[1
]}

Maezawa, Koichi ^{[1
]}

Mizutani, Takashi ^{[1
,2
]}

机构：

[1] Department of Quantum Engineering, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan

[2] Institute for Advanced Research, Nagoya University, Nagoya 464-8601, Japan

来源：

Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap | 1600年 / 4 B卷 / 3368-3371期

关键词：

Compendex;

D O I：

暂无

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学科分类号：

摘要：

Electric currents - Electric fields - Frequencies - Gallium nitride

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