Large Signal Model of AIGaN/GaN High Electron Mobility Transistor

被引：0
|
作者：
Jiang Xia [1 ]
Yang Ruixia [1 ]
Zhao Zhengping [2 ]
Zhang Zhiguo [2 ]
Feng Zhihong [2 ]
机构：
[1] Hebei Univ Technol, Coll Informat Engn, Tianjin 300130, Peoples R China
[2] CETC, Res Inst 13, Natl Key Lab ASIC, Shijiazhuang 050051, Peoples R China
来源：
2010 THE 3RD INTERNATIONAL CONFERENCE ON COMPUTATIONAL INTELLIGENCE AND INDUSTRIAL APPLICATION (PACIIA2010), VOL V | 2010年
关键词：
AIGaN/GaN HEMT large signal model ADS MMIC;
D O I：
暂无
中图分类号：
TP18 [人工智能理论];
学科分类号：
081104 ; 0812 ; 0835 ; 1405 ;
摘要：
A accurate nonlinear large signal model was extracted in this paper. The model is capable of correctly modeling the DC characteristics of AIGaN/GaN HEMT. The parameters of model are obtained from a series of pulsed I-V characteristics and S parameters adopting the on-wafer testing technique and narrow pulse testing technology. The model is implemented in ADS software, simulations and measurements data show its availability and can be used for GaN MMIC's designing.
引用
收藏
页码：335 / 336
页数：2
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